标题:Ellipsometry analysis of MgxZn1-xO films on silicon substrates
作者:Yu, Yuanxun; Lian, Jie; Guan, Wenli; Yu, Xiaohong
通讯作者:Yu, Yuan Xun
作者机构:[Yu, Yuanxun; Guan, Wenli] Qilu Normal Univ, Coll Phys & Elect Engn, Jinan, Peoples R China.; [Lian, Jie; Yu, Xiaohong] Shandong Univ, Sch Informat 更多
会议名称:3rd Asian Pacific Conference on Mechanical Components and Control Engineering (ICMCCE)
会议日期:SEP 20-21, 2014
来源:MECHANICAL COMPONENTS AND CONTROL ENGINEERING III
出版年:2014
卷:668-669
页码:95-101
DOI:10.4028/www.scientific.net/AMM.668-669.95
关键词:MgZnO thin films; RF magnetron sputtering; Ellipsometry; Si substrate
摘要:MgxZn1-xO films with hexagonal structure are prepared by radio frequency (rf) magnetron sputtering on Si substrate. The refractive indices and absorption coefficients of these films in the wavelength range from 300 to 800nm are determined by using ellipsometry at room temperature. The results show that the refractive index increases as the wavelength decreases in the transparent region (400-800nm). It reaches its maximum value around 340nm and 331nm, which is close to the fundamental absorption edge. Then the refractive index decreases as the wavelength gets shorter. The value of the refractive index is also a function of the Mg content. The higher the Mg content is in the film, the smaller the refractive index of the film is in the wavelength range from 330nm to 850nm. The band gap energy of the MgxZn1-xO film is obtained by analyzing its absorption spectrum. An increase in the Mg content causes the fundamental absorption edge to shift toward shorter wavelength. In addition, UV and strong blue emission have been observed when the MgxZn1-xO film is excited with light wave of 260nm at room temperature, and the emission mechanism is discussed.
收录类别:CPCI-S;EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84920784888&doi=10.4028%2fwww.scientific.net%2fAMM.668-669.95&partnerID=40&md5=85ac9a08995131d86105e3f1c512f62d
TOP