标题:Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode
作者:Li, Peixu; Jiang, Kai; Li, Shuqiang; Xia, Wei; Zhang, Xin; Tang, Qingmin; Ren, Zhongxiang; Xu, Xiangang
作者机构:[Li, Peixu; Jiang, Kai; Li, Shuqiang; Xia, Wei; Xu, Xiangang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.; [Li, Peixu; 更多
通讯作者:Xu, X
通讯作者地址:[Li, PX]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:CHINESE OPTICS LETTERS
出版年:2010
卷:8
期:5
页码:493-495
DOI:10.3788/COL20100805.0493
摘要:Asymmetric broad-waveguide separate-confinement heterostructure (BW-SCH) quantum well (QW) laser diode emitting at 808 rim is analyzed and designed theoretically. The dependence of the optical field distribution, vertical far-field angle, and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed. Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3 mu m, respectively, for the devices with 100-mu m-wide stripe and 1000-mu m-long cavity, an output power of 7.6 W at 8 A, a vertical far-field angle of 37 degrees, a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:3
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-77953315585&doi=10.3788%2fCOL20100805.0493&partnerID=40&md5=e7dac5eb52b45b84131e7c3a04a3260b
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