标题:Fabrication and Performance of Pentacene Thin-film Transistors with SiO2/PMMA Bilayer Dielectric
作者:Zhao, Xurong; Wang, Sumei; Ma, Keke
通讯作者:Zhao, XR
作者机构:[Zhao, Xurong; Wang, Sumei; Ma, Keke] Shandong Univ, Minist Educ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Jinan 250061, Peoples R China.
会议名称:IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
会议日期:OCT 29-NOV 01, 2012
来源:2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)
出版年:2012
页码:809-811
摘要:In this paper, the organic pentacene-based thin film transistors with SiO2/PM MA bilayer dielectric were fabricated and the device performance improvement with the varying PM MA concentration was investigated. When the PM MA concentration decreases from 60mg/ml to 20 mg/ml, the device mobility increases from 0.06 to 0.1 cm(2)/Vs, and the on/off current ratio increases from 10(3) to 10(4). Top-contact OTFT devices with double PM MA layer were also fabricated. The results showed that the second PM MA layer can modify the dielectric/semiconductor interface and therefore improve the device performance
收录类别:CPCI-S
资源类型:会议论文
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