标题:Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment
作者:Xu, Meng ;Liu, Xiaohui ;Xu, Weidong ;Xu, Huayong ;Hao, Xiaotao ;Feng, Xianjin
作者机构:[Xu, Meng ;Liu, Xiaohui ;Xu, Weidong ;Xu, Huayong ;Feng, Xianjin ] Center of Nanoelectronics and School of Microelectronics, Shandong University, Jina 更多
通讯作者:Feng, Xianjin
来源:Journal of Alloys and Compounds
出版年:2018
卷:769
页码:484-489
DOI:10.1016/j.jallcom.2018.08.048
摘要:Cu2O films were deposited on the sapphire substrates by pulsed laser deposition. The effects of nitrogen plasma treatment on the properties of the Cu2O films were studied. A phase transition from pure Cu2O to mixture of Cu2O and Cu and a change from p to n-type conduction were observed after the films being treated for different durations. The optical band gap of the films varied from 2.51 to 2.56 eV. Phase-pure n-type Cu2O film having a very smooth surface, a low resistivity of 20.50 Ω cm and a moderate Hall mobility of 3.76 cm2·v−1·s−1 was obtained for the 10 min plasma treated sample. The n-type conduction mechanism was discussed and clarified.
© 2018 Elsevier B.V.
收录类别:EI
资源类型:期刊论文
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