标题：Influence of sputtering pressure on the properties of transparent conductive titanium-doped zinc oxide thin films
作者：Liu, Han-Fa ;Yuan, Yu-Zhen ;Zhang, Hua-Fu ;Yuan, Chang-Kun
作者机构：[Liu, Han-Fa ;Yuan, Yu-Zhen ;Zhang, Hua-Fu ;Yuan, Chang-Kun ] School of Science, Shandong University of Technology, Zibo 255049, China
来源：Rengong Jingti Xuebao/Journal of Synthetic Crystals
摘要：Transparent conducting titanium-doped zinc oxide films with high transparency and relatively low resistivity had been successfully prepared by DC magnetron sputtering at room temperature. Micro-structural, optical and electrical properties of ZnO:Ti films were investigated. SEM photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of ZnO:Ti films. The electrical resistivity decreases when the sputtering pressure increases from 1.0 Pa to 5.0 Pa. When the sputtering pressure is 5.0 Pa, it is obtained that the lowest resistivity is 1.084 ×10-4 Ω · cm. The electrical resistivity increases when the sputtering pressure increases from 5.0 Pa to 6.0 Pa. All the films present a high transmittance of above 91% in the visible range. ZnO:Ti films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.