标题:Atomic arrangement and formation of planar defects in the mu phase of Ni-base single crystal superalloys
作者:Ma, Shiyu; Li, Xueqiao; Zhang, Jianxin; Liu, Jide; Li, Pan; Zhang, Youjian; Jin, Huixin; Zhang, Wenyang; Zhou, Yizhou; Sun, Xiaofeng 更多
通讯作者:Zhang, JX
作者机构:[Ma, Shiyu; Zhang, Jianxin; Li, Pan; Zhang, Youjian; Jin, Huixin; Zhang, Wenyang] Shandong Univ, Minist Educ, Key Lab Liquid Solid Struct Evolut & Pro 更多
会议名称:24th International Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM)
会议日期:JUN 18-23, 2017
来源:JOURNAL OF ALLOYS AND COMPOUNDS
出版年:2018
卷:766
页码:775-783
DOI:10.1016/j.jallcom.2018.07.035
关键词:Ni-base single crystal superalloys; mu phase; Planar defects;; HAADF-STEM; Atomic arrangement characteristics
摘要:The internal characteristics of the mu phase in Ni-base single crystal superalloys aged at 1100 degrees C for 1000 h were investigated via spherical aberration-corrected transmission electron microscopy. There were a large number of planar defects on the (001) plane at the growth tip of the m phase. HAADF-STEM results show that these planar defects were mainly of two types. 1) A twin structure with a mirror plane of the middle atomic planes of the Zr4Al3 sheet, which was generated by shearing of atoms in the MgCu2 sheet along the [1-10] direction. 2) A mirror-symmetrical stacking fault of two Zr4Al3 sheets, which was formed by the pulling out of a single MgCu2 sheet. The planar defects were mainly caused by coordination of the distortions of the m phase and the matrix. Segregation of Mo, Cr, and Re elements occurred near stacking faults, rather than twin structures. (C) 2018 Elsevier B.V. All rights reserved.
收录类别:CPCI-S;SCIE
WOS核心被引频次:1
资源类型:会议论文
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