标题:Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
作者:Zhu, Gengchang; Wang, Hanbin; Wang, Yiming; Feng, Xianjin; Song, Aimin
作者机构:[Zhu, Gengchang; Wang, Hanbin; Wang, Yiming; Feng, Xianjin; Song, Aimin] Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China.; [Zhu, Gengcha 更多
通讯作者地址:[Feng, XJ]Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China;[Feng, XJ]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.
来源:APPLIED PHYSICS LETTERS
出版年:2016
卷:109
期:11
DOI:10.1063/1.4962894
摘要:A surface passivation technique has been developed for AlGaN/AlN/GaN high electron mobility transistors (HEMTs) by simple thermal evaporation of silicon monoxide (SiO) at room temperature. Detailed device characteristics were studied and compared with the most commonly used SiNx passivation grown by plasma enhanced chemical vapor deposition at elevated temperatures. Both passivation techniques lead to a similar enhancement in the on-state drain current and transconductance as compared with the unpassivated HEMTs. However, we discovered that the gate leakage current in the SiO passivated devices was more than two orders of magnitude lower than the devices passivated by SiNx. Furthermore, while the SiNx passivated HEMTs exhibited a two orders of magnitude increase in off-state drain current, SiO passivation substantially reduced it, resulting in an overall improvement by a factor of 1429. The extent of the device surface damage caused by passivation was also investigated by characterizing other parameters. The subthreshold slope of the SiO passivated HEMTs was 95 mV dec(-1), nearly 5 times better than the SiNx passivated devices. The extracted interface trap density was 1.16 x 10(12) cm(-2) eV(-1), about ten times lower than that in the SiNx passivated HEMTs. Moreover, SiO passivation was found to enhance the gate Schottky barrier height by 60 meV whereas SiNx passivation reduced it, which could partially explain the differences in the gate leakage current. Finally, SiO passivation enabled twice high breakdown voltage than SiNx passivation. The relevant physical mechanisms were discussed. Published by AIP Publishing.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988504074&doi=10.1063%2f1.4962894&partnerID=40&md5=6636234a9aa2e6ba18af3e444b19f55d
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