标题:Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2films on MgF2(110) substrates by MOCVD
作者:He, Linan ;Luan, Caina ;Feng, Xianjin ;Xiao, Hongdi ;Ma, Jin
作者机构:[He, Linan ;Luan, Caina ;Feng, Xianjin ;Xiao, Hongdi ;Ma, Jin ] School of Microelectronics, Shandong University, Jinan; 250100, China
通讯作者:Ma, Jin
来源:Journal of Alloys and Compounds
出版年:2018
卷:741
页码:677-681
DOI:10.1016/j.jallcom.2018.01.219
摘要:Niobium (Nb)-doped SnO2films were epitaxially grown on MgF2(110) substrates by the metal organic chemical vapor deposition (MOCVD) technique. Structural, electrical and optical properties of the obtained films with different Nb-doping levels were investigated. The X-ray diffraction analysis revealed that the obtained films were rutile structure SnO2grown along the (110) orientation. The epitaxial relationship between the Nb-doped SnO2film and MgF2substrate was clarified as SnO2(110) || MgF2(110) with SnO2[001] || MgF2[001] by the interface selected area electron diffraction measurement. A Hall mobility as high as 84 cm2V−1s−1with the lowest resistivity of 2.9 × 10−3Ω cm were obtained for the 4.3 at.% Nb-doped SnO2film. The average optical transmittance in visible range of the 4.3 at.% Nb-doped SnO2film exceeded 80% and the optical band gap was about 4.04 eV.
© 2018 Elsevier B.V.
收录类别:EI
资源类型:期刊论文
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