标题:Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array
作者:Zhang, Xinlei; Ji, Hao; Jiang, Ran
作者机构:[Zhang, Xinlei; Ji, Hao; Jiang, Ran] Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China.
通讯作者:Jiang, R;Jiang, Ran
通讯作者地址:[Jiang, R]Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China.
来源:IEEE TRANSACTIONS ON ELECTRON DEVICES
出版年:2019
卷:66
期:8
页码:3337-3341
DOI:10.1109/TED.2019.2924038
关键词:1R; crossbar array; hafnium oxide; memory; selector; self-rectifying
摘要:Self-rectifying using a pure HfO2 layer with asymmetric structure was realized in Pt/HfO2/n(+)-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (> 10(5)). The electrostatic effect induced by the asymmetric structure of the HfO2 layer is responsible for the rectifying behavior. This kind of rectifying paves a new way for resolving the sneak current issue in RRAM arrays.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85069922840&doi=10.1109%2fTED.2019.2924038&partnerID=40&md5=c42a95ff97c501e0bbfe5f29a51938b7
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