标题:Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
作者:Jiang, Jianfeng; Li, Jingxin; Li, Yutao; Duan, Jiazhzhi; Li, Linshen; Tian, Ye; Zong, Zhihua; Zheng, Haotian; Feng, Xianjin; Li, Qiq 更多
作者机构:[Jiang, Jianfeng; Li, Qiqiang; Zhang, Yu; Han, Lin] Shandong Univ, Inst Marine Sci & Technol, Qingdao 266237, Shandong, Peoples R China.; [Jiang, Ji 更多
通讯作者:Zhang, Y;Han, L;Han, L;Ren, TL;Zhang, Yu
通讯作者地址:[Zhang, Y; Han, L]Shandong Univ, Inst Marine Sci & Technol, Qingdao 266237, Shandong, Peoples R China;[Han, L]Shandong Univ, Shenzhen Res Inst, Shenzh 更多
来源:NPJ 2D MATERIALS AND APPLICATIONS
出版年:2019
卷:3
DOI:10.1038/s41699-019-0110-x
摘要:Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work has been performed to improve the mobility of InSe FETs. However, in practical applications, electrical stability of FETs is another essential factor to guarantee the performance of the electronic system. Here, we show a highly stable InSe FET with a field-effect mobility of 1200 cm(2)/V.s in the practical working regime. The bottom-gate staggered InSe FET was fabricated with a polymethyl methacrylate (PMMA)/HfO2 dual-layer gate dielectric and PMMA back-channel encapsulation. The hysteresis was maintained at 0.4 V after 30 days of storage under normal ambient conditions, and the threshold voltage shift was retained at 0.6 V with a gate stress V-GS of 10 V, which represents the best electrical stability reported to date. Its high mobility and electrical stability enable reliable detection of the weak nerve action potential at a low power consumption. High-performance InSe FETs expand their promising applications in flexible and in situ real-time intelligent nerve action potential recording.
收录类别:EI;SCIE
资源类型:期刊论文
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