标题：Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte
作者：Gao, Qingxue; Xiao, Hongdi; Cao, Dezhong; Yang, Xiaokun; Liu, Jiandiang; Mao, Hongzhi; Ma, Jin
作者机构：[Gao, Qingxue; Xiao, Hongdi; Yang, Xiaokun; Ma, Jin] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.; [Cao, Dezhong; Liu, Jiandiang] S 更多
通讯作者地址：[Xiao, HD]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.
来源：JOURNAL OF ALLOYS AND COMPOUNDS
关键词：Self-standing GaN-based thin films; Electrochemical etching; InGaN/GaN; MQWs; Neutral electrolyte
摘要：We found an electrochemical method which can be used to rapidly fabricate GaN-based thin film with phase-separated InGaN/GaN multiple quantum well (MQW) via an electrochemical etching technique. Compared with the as-grown sample, light extraction efficiency is significantly improved for the etched samples due to the increased light-extracting surface area and improved internal quantum efficiency which is due to the relaxation of strain in the MQWs embedded in the nanoporous n-GaN layers. The several growth stages of nanoporous GaN were examined by microscopic technique, indicating the variation from dislocation defects in the GaN/porous GaN interface to oxidation of GaN, and finally to formation of GaNO3 which is soluble in water. (C) 2017 Elsevier B.V. All rights reserved.