标题:Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte
作者:Gao, Qingxue; Xiao, Hongdi; Cao, Dezhong; Yang, Xiaokun; Liu, Jiandiang; Mao, Hongzhi; Ma, Jin
作者机构:[Gao, Qingxue; Xiao, Hongdi; Yang, Xiaokun; Ma, Jin] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.; [Cao, Dezhong; Liu, Jiandiang] S 更多
通讯作者:Xiao, Hongdi
通讯作者地址:[Xiao, HD]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.
来源:JOURNAL OF ALLOYS AND COMPOUNDS
出版年:2017
卷:722
页码:767-771
DOI:10.1016/j.jallcom.2017.06.158
关键词:Self-standing GaN-based thin films; Electrochemical etching; InGaN/GaN; MQWs; Neutral electrolyte
摘要:We found an electrochemical method which can be used to rapidly fabricate GaN-based thin film with phase-separated InGaN/GaN multiple quantum well (MQW) via an electrochemical etching technique. Compared with the as-grown sample, light extraction efficiency is significantly improved for the etched samples due to the increased light-extracting surface area and improved internal quantum efficiency which is due to the relaxation of strain in the MQWs embedded in the nanoporous n-GaN layers. The several growth stages of nanoporous GaN were examined by microscopic technique, indicating the variation from dislocation defects in the GaN/porous GaN interface to oxidation of GaN, and finally to formation of GaNO3 which is soluble in water. (C) 2017 Elsevier B.V. All rights reserved.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85021088943&doi=10.1016%2fj.jallcom.2017.06.158&partnerID=40&md5=40a2a1e1d2215ae97cb94e842dc567d9
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