标题:InAs-Nanowire-Based Broadband Ultrafast Optical Switch
作者:Liu, Junting; Khayrudinov, Vladislav; Yang, He; Sun, Yue; Matveev, Boris; Remennyi, Maxim; Yang, Kejian; Haggren, Tuomas; Lipsanen, Ha 更多
作者机构:[Liu, Junting; Yang, Kejian; Zhang, Baitao; He, Jingliang] Shandong Univ, Inst Crystal Mat, Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R Chi 更多
通讯作者:Zhang, BT;Yang, H;Yang, He
通讯作者地址:[Zhang, BT]Shandong Univ, Inst Crystal Mat, Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China;[Yang, H]Aalto Univ, Dept Elect & Nanoengn, F 更多
来源:JOURNAL OF PHYSICAL CHEMISTRY LETTERS
出版年:2019
卷:10
期:15
页码:4429-4436
DOI:10.1021/acs.jpclett.9b01626
摘要:Due to their tunable optical properties with various shapes, sizes, and compositions, nanowires (NWs) have been regarded as a class of semiconductor nanostructures with great potential for photodetectors, light- emitting diodes, gas sensors, microcavity lasers, optical modulators, and converters. Indium arsenide (InAs), an attractive III-V semiconductor NW with the advantages of narrow bandgap and large electron mobility, has attracted considerable interest in infrared optoelectronic and photonic devices. Here, we studied the ultrafast carrier dynamics and nonlinear optical responses of InAs NWs ranging from 1.0 to 2.8 mu m and demonstrated the InAs-NW-based ultrafast broadband optical switch for passively Q-switching in all-solid-state laser systems. Furthermore, we achieved ultrafast optical modulation for laser mode-locking at 1.0 mu m, paving the way for their applications in the field of ultrafast optics. These exotic optical properties indicate that InAs NWs have significant potential for various optoelectronic and photonic devices, especially in the mid-infrared wavelength range.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070849639&doi=10.1021%2facs.jpclett.9b01626&partnerID=40&md5=6543fa80f3ab1a25fe5ba60225040a86
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