标题：N Investigation of mode partition noise in Fabry-Perot laser diode
作者：Guo, Qingyi; Deng, Lanxin; Mu, Jianwei; Li, Xun; Huang, Wei-Ping
作者机构：[Guo, Qingyi; Deng, Lanxin; Li, Xun] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada.; [Mu, Jianwei] MIT, Microphoton Ctr, Dept 更多
会议名称：Conference on Photonics North
会议日期：MAY 28-30, 2014
来源：PHOTONICS NORTH 2014
关键词：Mode partition noise (MPN); k-factor; Fabry-Perot (FP) laser diode;; passive optical network (PON)
摘要：Passive optical network (PON) is considered as the most appealing access network architecture in terms of cost-effectiveness, bandwidth management flexibility, scalability and durability. And to further reduce the cost per subscriber, a Fabry-Perot (FP) laser diode is preferred as the transmitter at the optical network units (ONUs) because of its lower cost compared to distributed feedback (DFB) laser diode. However, the mode partition noise (MPN) associated with the multi-longitudinal-mode FP laser diode becomes the limiting factor in the network. This paper studies the MPN characteristics of the FP laser diode using the time-domain simulation of noise-driven multi-mode laser rate equation. The probability density functions are calculated for each longitudinal mode. The paper focuses on the investigation of the k-factor, which is a simple yet important measure of the noise power, but is usually taken as a fitted or assumed value in the penalty calculations. In this paper, the sources of the k-factor are studied with simulation, including the intrinsic source of the laser Langevin noise, and the extrinsic source of the bit pattern. The photon waveforms are shown under four simulation conditions for regular or random bit pattern, and with or without Langevin noise. The k-factors contributed by those sources are studied with a variety of bias current and modulation current. Simulation results are illustrated in figures, and show that the contribution of Langevin noise to the k-factor is larger than that of the random bit pattern, and is more dominant at lower bias current or higher modulation current.