标题:Growth dynamics of single void during Czochralski silicon crystal growth using phase-field modeling
作者:Wang, Jin ;Guan, Xiao Jun ;Zhang, Xiang Yu ;Zeng, Qing Kai
作者机构:[Wang, Jin ;Guan, Xiao Jun ;Zhang, Xiang Yu ] School of Materials Science and Engineering, Shandong University, Jinan 250061, China;[Zeng, Qing Kai ] 更多
会议名称:2nd International Conference on Materials Engineering, ICMEN 2014
会议日期:17 May 2014 through 18 May 2014
来源:Applied Mechanics and Materials
出版年:2014
卷:576
页码:3-7
DOI:10.4028/www.scientific.net/AMM.576.3
关键词:Czochralski process; Growth dynamics; Phase-field model; Silicon crystal; Single void
摘要:To investigate the growth dynamics of the single void during Czochralski silicon growth as well as capture the basic features of the diffusion-controlled dynamic mechanisms, a phase field method has been developed. The free energy of the system involving the chemical free energy and the gradient energy is presented. Numerical tests were performed to examine the capability of this model, and the results show that: the void grows due to the absorption of vacancies in the matrix, which essentially reduces the free energy of the system; with the growth of the void, there forms vacancy concentration gradient towards the void in the matrix; the increase of initial vacancy concentration contributes to a larger void size and growth rate. © (2014) Trans Tech Publications, Switzerland.
收录类别:EI;SCOPUS
Scopus被引频次:1
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904284859&doi=10.4028%2fwww.scientific.net%2fAMM.576.3&partnerID=40&md5=a5215d475d2b5a7e6a3aaff955cb88cf
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