标题:3C-SiC nanowires and micro-scaled polyhedra: Synthesis, characterization and properties
作者:Pang, Qiaolian; Xu, Liqiang; Ju, Zhicheng; Xing, Zheng; Yang, Lishan; Hao, Qin; Qian, Yitai
作者机构:[Pang, Qiaolian; Xu, Liqiang; Ju, Zhicheng; Xing, Zheng; Yang, Lishan; Hao, Qin; Qian, Yitai] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Shand 更多
通讯作者:Xu, L
通讯作者地址:[Xu, LQ]Shandong Univ, Sch Chem & Chem Engn, Shanda Nanlu 27, Jinan 250100, Shandong, Peoples R China.
来源:JOURNAL OF ALLOYS AND COMPOUNDS
出版年:2010
卷:501
期:1
页码:60-66
DOI:10.1016/j.jallcom.2010.04.028
关键词:Silicon carbide; Nanostructured materials; Transmission electron; microscopy; X-ray diffraction; Scanning electron microscopy
摘要:Cubic phase silicon carbide (3C-SiC) nanowires (labeled as "Sample 1") with diameters ranging from 10 nm to 80 nm and lengths up to several micrometers were obtained by using CHI(3). Si powder, and metallic Na as reactants at 230 degrees C. In addition, SiC polyhedra (labeled as "Sample 2") with smooth surfaces and diameters of 2-5 mu m were obtained by using the different amounts of the same reactants at 500 degrees C. The room-temperature photoluminescence (PL) spectra of Sample 1 and Sample 2 show strong ultraviolet emission peaks centered at 360 nm and 354 nm, respectively. Thermal gravimetric analysis (TGA) curves reveal that the thermal stability (against air oxidation) of Sample 2 is better than Sample 1. The possible formation mechanisms of the products with distinct dimensions were briefly discussed. (C) 2010 Elsevier B.V. All rights reserved.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:9
Scopus被引频次:10
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954213263&doi=10.1016%2fj.jallcom.2010.04.028&partnerID=40&md5=012b04c782381fd5bae09f1c0eda8873
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