标题:Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
作者:Yang, Guanhua; Shao, Yan; Niu, Jiebin; Ma, Xiaolei; Lu, Congyan; Wei, Wei; Chuai, Xichen; Wang, Jiawei; Cao, Jingchen; Huang, Hao; 更多
作者机构:[Yang, Guanhua; Niu, Jiebin; Lu, Congyan; Wei, Wei; Chuai, Xichen; Wang, Jiawei; Cao, Jingchen; Xu, Guangwei; Shi, Xuewen; Ji, Zhuoyu; Lu, Nianduan; G 更多
通讯作者:Li, L;Liu, M;Wang, YL;Wang, YL;Duan, XF;Duan, XF
通讯作者地址:[Li, L; Liu, M]Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;[Wang, YL]Chinese A 更多
来源:NATURE COMMUNICATIONS
出版年:2020
卷:11
期:1
DOI:10.1038/s41467-020-14383-0
摘要:In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.; Though metallic edge states in monolayer transition metal dichalcogenide have been observed before, how these states contribute to charge transport remains unclear. Here, the authors quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing a dominated non-linear edge transport at low temperature, indicating possible Luttinger liquid behavior.
收录类别:SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078840791&doi=10.1038%2fs41467-020-14383-0&partnerID=40&md5=ee08d99fcfc4bdb5635ecbd5ae7a597d
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