标题:Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers
作者:Xianglong Yang;Kun Yang;Yingxin Cui;Yan Peng;Xiufang Chen;Xuejian Xie;Xiaobo Hu
作者机构:[Yang, X] State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China;[ Yang, K] State Key Laboratory of Crystal Materials, S 更多
通讯作者:Hu, Xiaobo
通讯作者地址:[Hu, XB]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:金属学报(英文版)
出版年:2014
卷:27
期:6
页码:1083-1087
DOI:10.1007/s40195-014-0129-0
关键词:SiC;Anomalous resistivity;Polytype inclusion;Activation energy;Compensation mechanism
摘要:The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating 4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.
收录类别:EI;CSCD;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84912072777&doi=10.1007%2fs40195-014-0129-0&partnerID=40&md5=edcbbd23e9038058302c4dc1a1daad3c
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