标题：Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers
作者：Xianglong Yang;Kun Yang;Yingxin Cui;Yan Peng;Xiufang Chen;Xuejian Xie;Xiaobo Hu
作者机构：[Yang, X] State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China;[ Yang, K] State Key Laboratory of Crystal Materials, S 更多
通讯作者地址：[Hu, XB]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
关键词：SiC;Anomalous resistivity;Polytype inclusion;Activation energy;Compensation mechanism
摘要：The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating 4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.