标题:Threading dislocation classification for 4H-SiC substrates using the KOH etching method
作者:Cui, Yingxin; Hu, Xiaobo; Xie, Xuejian; Xu, Xiangang
作者机构:[Cui, Yingxin] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China.; [Cui, Yingxin] China Acad Engn Phys, 更多
通讯作者:Hu, XB;Xu, XG;Hu, XB;Xu, XG
通讯作者地址:[Hu, XB; Xu, XG]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China;[Hu, XB; Xu, XG]Collaborat Innovat Ctr Global Energy 更多
来源:CRYSTENGCOMM
出版年:2018
卷:20
期:7
页码:978-982
DOI:10.1039/c7ce01855j
摘要:We have studied the threading dislocations of 4H-SiC substrates with different conductivity types by means of molten KOH defect selective etching. The etch pit sectional view and morphology evolution of the threading dislocations with etching time were observed with the help of a LEXT OLS4000 3D laser confocal microscope. Combining experimental observation with theoretical analysis of the corrosion process and dislocation energy field characteristics, a method for identification of threading screw dislocations and threading edge dislocations was proposed based on etch pit sectional view information and etch pit angle. An investigation of the defect corrosion process can promote a deep understanding of the chemical etching mechanism of SiC single crystals.
收录类别:SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042012200&doi=10.1039%2fc7ce01855j&partnerID=40&md5=b49c0001910544c03f51a24253fc55b0
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