标题:Efficient field emission from porous silicon
作者:Zhang, Yongsheng ;Yu, Ke ;Luo, Laiqiang ;Zhu, Ziqiang
通讯作者:Zhu, Z
作者机构:[Zhang, Yongsheng ;Yu, Ke ;Luo, Laiqiang ;Zhu, Ziqiang ] Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China;[ 更多
会议名称:Fifth International Conference on Thin Film Physics and Applications
会议日期:31 May 2004 through 2 June 2004
来源:Proceedings of SPIE - The International Society for Optical Engineering
出版年:2005
卷:5774
页码:116-119
DOI:10.1117/12.607469
关键词:A. Porous silicon; B. Fabrication; C. Electron field emission
摘要:Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristics of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm2 was obtained. The emission current density from the PS films reached 1mA/cm2 under a applied field of about 12.5V/μm. The experimental results demonstrate that the PS films have great potential applications for flat panel displays.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-25644461247&doi=10.1117%2f12.607469&partnerID=40&md5=d5d5f41e153a588d664ecf9ad565409a
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