标题:An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level
作者:Wang, Panrui; Gao, Feng; Jing, Yang; Chen, Yufeng; Zhang, Lei
通讯作者:Wang, PR
作者机构:[Wang, Panrui; Gao, Feng; Jing, Yang] Shandong Univ, Sch Elect Engn, Jinan, Shandong, Peoples R China.; [Chen, Yufeng; Zhang, Lei] State Grid Shando 更多
会议名称:8th International Power Electronics Conference (IPEC-Niigata ECCE Asia)
会议日期:MAY 20-24, 2018
来源:2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA)
出版年:2018
页码:3383-3389
关键词:equivalent model; series connected; SiC MOSFET
摘要:Current commercial available SiC MOSFET can hardly meet the requirement of high-voltage electrical application. Connecting SiC MOSFETs in series is a feasible solution. In order to utilize series connected SiC MOSFETs better, a comprehensive understanding of its switching process is of great necessity, especially turn-off process when huge different voltage sharing may occur. This paper focus on two factors, the nonlinearity of SiC MOSFET junction capacitance C-j and the existence of freewheeling diode junction capacitance C-f. A circuit analysis of series connected SiC MOSFETs is proposed. This paper analyzes the turn-off process of series connected SiC MOSFETs qualitatively and mathematically, and the expressions of key parameters, such as d(vds)/dt during turn-off process, are derived. The characteristics of series connected SiC MOSFETs during turn-off process are revealed. Finally, the accuracy of the analysis is verified by experimental results.
收录类别:CPCI-S
资源类型:会议论文
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