标题:Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors
作者:Yang, Wenjing ;Li, Yuan ;Wang, Bo ;Qian, He ;Chen, Jiezhi
作者机构:[Yang, Wenjing ;Li, Yuan ;Chen, Jiezhi ] School of Information Science and Engineering, Shandong University, Qingdao; 266237, China;[Wang, Bo ;Qian, H 更多
会议名称:1st IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018
会议日期:November 21, 2018 - November 23, 2018
来源:Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018
出版年:2019
页码:175-176
DOI:10.1109/CICTA.2018.8705715
摘要:Aiming at providing insight into the reliabilities of three-dimensional NAND flash memories with poly-Si channel, this work experimentally studied the positive bias temperature instability (PBTI) in vertical gate-all-around (GAA) poly-Si nanowire field-effect transistors (FETs). On the one side, the carrier-transport properties in the poly-Si nanowire are studied in a wide temperature range. On the other side, threshold voltage shifts, subthreshold slope, and transconductance under positive bias stress are measured, showing that the interface degradation takes place in a time scale much shorter than that of the Vth shift. These findings can be rationalized by the presence of serious trap charging in the gate dielectrics.
© 2018 IEEE.
收录类别:EI
资源类型:会议论文
TOP