标题:Growth and annealing characterization of ZnGeP_2 crystal
作者:Yongjuan Yang;Yujun Zhang;Qingtian Gu;Huaijin Zhang;Xutang Tao
通讯作者:Gu, Q
作者机构:[Yang, Y] State Key Laboratory of Crystal Materials, Institute of Crystal Material, Shandong University, Jinan 250100, China;[ Zhang, Y] East China Mi 更多
会议名称:16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
会议日期:AUG 08-13, 2010
来源:Journal of Crystal Growth
出版年:2011
卷:318
期:1
页码:721-724
DOI:10.1016/j.jcrysgro.2010.11.039
关键词:A1. Characterization;A2. Bridgman technique;A2. Single crystal growth;B1. Zinc compounds;B2. Nonlinear optic materials
摘要:Mid-infrared ZnGeP_2 single crystal was successfully grown by the vertical Bridgman technique under the condition of spontaneous nucleation. By the X-ray Fluorescence analysis method, the constitution of Zn, Ge and P in as-grown ZnGeP_2 single crystal was measured. Its defects were studied with an optical microscope. The laser damage threshold of ZnGeP_2 crystals was measured to be 55.67 MW/cm2 at the wavelength of 1064 nm. The transmission spectra of ZnGeP_2 were measured at room temperature. By annealing treatment in vacuum, ZnGeP_2 powder and a pressure, its optical absorption in the region 0.7-2.5 μm was found to decrease.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:8
Scopus被引频次:10
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952736778&doi=10.1016%2fj.jcrysgro.2010.11.039&partnerID=40&md5=1b0f4967396710bb059a09891f1a2a70
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