标题：Growth and annealing characterization of ZnGeP_2 crystal
作者：Yongjuan Yang;Yujun Zhang;Qingtian Gu;Huaijin Zhang;Xutang Tao
作者机构：[Yang, Y] State Key Laboratory of Crystal Materials, Institute of Crystal Material, Shandong University, Jinan 250100, China;[ Zhang, Y] East China Mi 更多
会议名称：16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
会议日期：AUG 08-13, 2010
来源：Journal of Crystal Growth
关键词：A1. Characterization;A2. Bridgman technique;A2. Single crystal growth;B1. Zinc compounds;B2. Nonlinear optic materials
摘要：Mid-infrared ZnGeP_2 single crystal was successfully grown by the vertical Bridgman technique under the condition of spontaneous nucleation. By the X-ray Fluorescence analysis method, the constitution of Zn, Ge and P in as-grown ZnGeP_2 single crystal was measured. Its defects were studied with an optical microscope. The laser damage threshold of ZnGeP_2 crystals was measured to be 55.67 MW/cm2 at the wavelength of 1064 nm. The transmission spectra of ZnGeP_2 were measured at room temperature. By annealing treatment in vacuum, ZnGeP_2 powder and a pressure, its optical absorption in the region 0.7-2.5 μm was found to decrease.