标题:Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05)2O3 films
作者:Xing Pengfei;Chen Yanxue;Sun Shaohua
作者机构:[Xing, P] Department of Applied Physics, Faculty of Science, Tianjin University, Tianjin 300072, China;[ Chen, Y] School of Physics, Shandong Universi 更多
通讯作者:Xing, P(pfxing@tju.edu.cn)
通讯作者地址:[Xing, P] Department of Applied Physics, Faculty of Science, Tianjin University, Tianjin 300072, China;
来源:半导体学报(英文版)
出版年:2013
卷:34
期:2
页码:15-18
DOI:10.1088/1674-4926/34/2/023002
关键词:pulsed laser deposition;room-temperature ferromagnetism;(In0.95-xSnxFe0.05)2O3 films;carrier concentration;bound magnetic polaron model
摘要:Room-temperature ferromagnetism was observed in (In0.95-xSn xFe0.05)2O3 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism. © 2013 Chinese Institute of Electronics.
收录类别:SCOPUS
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874471034&doi=10.1088%2f1674-4926%2f34%2f2%2f023002&partnerID=40&md5=9a3858785f7ecf0bf170639c08a4e3b9
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