标题:SURFACE-ADSORPTION AND CARBON INCORPORATION IN ALE GAAS GROWTH-PROCESS
作者:LIU, LQ; HUANG, BB; REN, HW; JIANG, MH
通讯作者:LIU, LQ
作者机构:[Liu, L.-Q] Institute of Crystal Materials, Shandong University, Jinan, 250100, China;[ Huang, B.-B] Institute of Crystal Materials, Shandong Universi 更多
会议名称:7TH INTERNATIONAL CONF ON VAPOUR GROWTH AND EPITAXY
会议日期:JUL 14-17, 1991
来源:JOURNAL OF CRYSTAL GROWTH
出版年:1991
卷:115
期:1-4
页码:83-88
DOI:10.1016/0022-0248(91)90717-J
摘要:The equilibrium gas phase compositions and the coverage on GaAs surface for a number of chemical species during the TMGa exposure period in the ALE GaAs growth process have been calculated. The results show that the GaAs surface coverage depends on the growth temperature, TMGa dosage and system pressure. The major Ga-containing species among the surface adsorbates are (CH3)2Ga and CH3Ga at lower temperatures, and atomic Ga and GaH at higher temperatures. The percentage of C-containing adsorbates on the GaAs surface decreases with the increase of temperature and the decrease of TMGa dosage. The influence of the growth temperature, TMGa dosage and system pressure on growth rate per cycle, as well as the carbon incorporation in ALE GaAs, are discussed.
收录类别:CPCI-S;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:2
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026414842&doi=10.1016%2f0022-0248%2891%2990717-J&partnerID=40&md5=92451d90f87434991bcbe5fbf1a7aacd
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