标题:Simulations of depleted CMOS sensors for high-radiation environments
作者:Liu, J.; Barbero, M.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; H 更多
通讯作者:Liu, J
作者机构:[Liu, J.; Wang, M.; Zhang, L.] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; [Liu, J.; Wang, M.; Zhang, L.] Shandong Univ, MOE, 更多
会议名称:19th International Workshop on Radiation Imaging Detectors
会议日期:JUL 02-06, 2017
来源:JOURNAL OF INSTRUMENTATION
出版年:2017
卷:12
期:11
DOI:10.1088/1748-0221/12/11/C11013
关键词:Detector modelling and simulations II (electric fields, charge; transport, multiplication and induction, pulse formation, electron; emission etc); Particle tracking detectors (Solid-state detectors);; Radiation-hard detectors; Solid state detectors
摘要:After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.
收录类别:CPCI-S;EI;SCOPUS;SCIE
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85038587020&doi=10.1088%2f1748-0221%2f12%2f11%2fC11013&partnerID=40&md5=033fb541520262d247bfc4f04075a04e
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