标题:Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
作者:Xiao-Jun GUAN;Xiang JI;
作者机构:[Xiao-Jun GUAN]School of Materials Science and Engineering, Shandong University;[Xiang JI]State Key laboratory of Crystal Material, Shandong Universit 更多
来源:Proceedings of 2016 4th International Conference on Machinery,Materials and Computing Technology(ICMMCT 2016)
出版年:2016
关键词:phase field simulation;silicon wafer;low temperature annealing;initial vacancy concentration;annealing temperature;oxygen clusters
摘要:In order to investigate the dual effect of initial vacancy concentration and annealing temperature on oxygen clusters′ evolution in RTP-treated silicon wafer during low temperature annealing, an established phase-field model and the optimum design method based on response surface was used to simulat...
资源类型:会议论文
原文链接:http://kns.cnki.net/kns/detail/detail.aspx?FileName=JKDZ201601002377&DbName=IPFD2017
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