标题:Graphene Q-Switched Cr:ZnSe Laser
作者:Wang, Zhao-Wei; Chen, Xiu-Fang; He, Jing-Liang; Xu, Xian-Gang; Zhang, Bai-Tao; Yang, Ke-Jian; Wang, Rui-Hua; Liu, Xun-Min
作者机构:[Wang, Zhao-Wei; Chen, Xiu-Fang; He, Jing-Liang; Xu, Xian-Gang; Zhang, Bai-Tao; Wang, Rui-Hua; Liu, Xun-Min] Shandong Univ, State Key Lab Crystal Mat, 更多
通讯作者地址:[Wang, ZW]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:IEEE JOURNAL OF QUANTUM ELECTRONICS
出版年:2015
卷:51
期:5
DOI:10.1109/JQE.2015.2410288
关键词:Measurement by laser beam; Graphene; Laser excitation; Silicon carbide;; Crystals; Educational institutions; Pump lasers; graphene saturable;; passively Q-switched
摘要:For the first time, to the best of our knowledge, a stable Q-switched Cr: ZnSe laser was realized with the graphene saturable absorber grown on SiC substrate. Under an absorbed pump power of 1.8 W, a maximum average output power of 256 mW was obtained with an optical-to-optical conversion efficiency of 14% and a slope efficiency of 19.6%, corresponding to the highest single pulse energy of 1.66 mu J. The shortest pulse width and highest pulse repetition rate were 157 ns and 169 kHz, respectively. Using a nanoscan beam analyzer, the M2 values of graphene Q-switched Cr: ZnSe laser were measured to be 1.09 and 1.16 for the horizontal and vertical directions. The experimental results indicate that graphene, combined with SiC substrate, provides a simple and cheap way to achieve efficient passively Q-switched lasers at 2.4 mu m.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84926303274&doi=10.1109%2fJQE.2015.2410288&partnerID=40&md5=08a74d6b03d813e1ef865973f7b6cf2d
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