标题:Oxide magnetic semiconductors: Materials, properties, and devices
作者:田玉峰;胡树军;颜世申;梅良模
作者机构:[Tian, Y.-F] School of Physics, Shandong University, Jinan 250100, China;[ Hu, S.-J] School of Physics, Shandong University, Jinan 250100, China;[ Yan 更多
通讯作者:Yan, SS
通讯作者地址:[Yan, SS]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
来源:中国物理B
出版年:2013
卷:22
期:8
页码:24-42
DOI:10.1088/1674-1056/22/8/088505
关键词:magnetic semiconductors;ferromagnetism;spintronics;magnetic;transport;optical
摘要:We give a brief introduction to the oxide (ZnO, TiO2, In2O3, SnO2, etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:8
Scopus被引频次:13
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883854148&doi=10.1088%2f1674-1056%2f22%2f8%2f088505&partnerID=40&md5=8f207024e3690aa9a9b099066544cc53
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