标题:Ion implantation, annealing diffusion and photoluminescence of Er in KTiOAsO4 crystals
作者:Wang, Liang-Ling; Cui, Xiao-Jun
通讯作者:Wang, LL
作者机构:[Wang, Liang-Ling] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.; [Wang, Liang-Ling] Jining U 更多
会议名称:18th International Conference on Ion Beam Modifications of Materials (IBMM)
会议日期:SEP 02-07, 2012
来源:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版年:2013
卷:307
页码:442-445
DOI:10.1016/j.nimb.2012.11.067
关键词:Erbium; Ion implantation; Photoluminescence
摘要:The KTiOAsO4 crystals have been implanted with 500 key Er ions at a fluence of 3.0 x 10(15) ions/cm(2) with the aim of optically doping the material in the near surface region. By combing the Stopping and Range of Ions in Matter results and X-ray diffraction results, we may conclude that the surface of the KTiOAsO4 crystal suffered serious damage after Er+ ion implantation. The depth distribution and annealing diffusion behavior of Er atoms were determined using the Rutherford backscattering technique. Photoluminescence emission at room temperature with a wavelength of 1540 nm was observed in the annealed sample. (C) 2013 Elsevier B.V. All rights reserved.
收录类别:CPCI-S;SCOPUS;SCIE
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885179511&doi=10.1016%2fj.nimb.2012.11.067&partnerID=40&md5=6ecb681f8a1443ae7a42b5a7766af54f
TOP