标题:Effect of ge nanocrystals on 1.54 μm photoluminescence enhancement in er2o3:Zno and ge co-sputtered films
作者:Fan R.; Lu F.; Li K.
作者机构:[Fan, R] School of Information Science and Engineering, Shandong University, Jinan, 250100, China;[ Lu, F] School of Information Science and Engineeri 更多
通讯作者:Lu, F(lufei@sdu.edu.cn)
通讯作者地址:[Lu, F] School of Information Science and Engineering, Shandong UniversityChina;
来源:Nanomaterials
出版年:2017
卷:7
期:10
DOI:10.3390/nano7100311
关键词:Deposition and fabrication; Nanomaterials; Optical properties of thin films; Photoluminescence; Rare-earth-doped materials
摘要:Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400–800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582–593 nm, which was consistent with the calculated energy of the exciton of the ~5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 μm emission, and it is considered that the 1.54 μm PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er3+ and the local environment change of Er3+. © 2017 by the authors. Licensee MDPI, Basel, Switzerland.
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85031432035&doi=10.3390%2fnano7100311&partnerID=40&md5=f9e68fdba90bc06ac8d5a7327cafaf57
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