标题：Effect of ge nanocrystals on 1.54 μm photoluminescence enhancement in er2o3:Zno and ge co-sputtered films
作者：Fan R.; Lu F.; Li K.
作者机构：[Fan, R] School of Information Science and Engineering, Shandong University, Jinan, 250100, China;[ Lu, F] School of Information Science and Engineeri 更多
通讯作者地址：[Lu, F] School of Information Science and Engineering, Shandong UniversityChina;
关键词：Deposition and fabrication; Nanomaterials; Optical properties of thin films; Photoluminescence; Rare-earth-doped materials
摘要：Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400–800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582–593 nm, which was consistent with the calculated energy of the exciton of the ~5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 μm emission, and it is considered that the 1.54 μm PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er3+ and the local environment change of Er3+. © 2017 by the authors. Licensee MDPI, Basel, Switzerland.