标题:An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method
作者:Yang, Qing; Yuan, Yirang
作者机构:[Yang Qing] School of Mathematical Science, Shandong Normal University, Jinan, Shandong 250014, China.;[Yuan Yirang] Institute of Mathematics, Shandon 更多
通讯作者:Yang, Q(sd_yangq@163.com)
通讯作者地址:[Yang, Q]Shandong Normal Univ, Sch Math Sci, Jinan 250014, Peoples R China.
来源:高等学校计算数学学报
出版年:2015
卷:8
期:3
页码:356-382
DOI:10.4208/nmtma.2015.my12031
关键词:Three-dimensional semiconductor devices; characteristics-mixed finite; element method; mixed finite element method; post-processing step; error; bound
摘要:The mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potential equation. For the two convection-dominated concentration equations, a characteristics-mixed finite element method is presented. The scheme is locally conservative. The optimal L-2-norm error estimates are derived by the aid of a post-processing step. Finally, numerical experiments are presented to validate the theoretical analysis.
收录类别:CSCD;SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84961575280&doi=10.4208%2fnmtma.2015.my12031&partnerID=40&md5=9157a3cb5d345f90847b3eefc030a37d
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