标题:The investigation of β-Ga2O3 Schottky diode with floating field ring termination and the interface states
作者:Hu Z.; Zhao C.; Feng Q.; Feng Z.; Jia Z.; Lian X.; Lai Z.; Zhang C.;等 更多
作者机构:[Hu, Z] State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China 更多
通讯作者:Feng, Q(qfeng@mail.xidian.edu.cn)
通讯作者地址:[Feng, Q] State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian UniversityChina;
来源:ECS Journal of Solid State Science and Technology
出版年:2020
卷:9
期:2
DOI:10.1149/2162-8777/ab6162
摘要:In this paper, we fabricated the vertical β-Ga2O3 Schottky barrier diodes with floating metal ring (FMR) edge termination structure. As the distance between the major Schottky junction and the FMR increasing, the breakdown voltage increases to 143, 161, 188 and 172 V, respectively, about 20.17%, 35.29%, 57.98% and 44.54% improvement in comparison with that without FMR. Under constant current stress, the variation of applied voltage indicates that the barrier height increases by the electron capture at the interface states while the barrier height decreases by the electron release. Furthermore, based on the excellent fitting of Gp/ω measurement data, the extracted trap levels are within the range of 0.87–0.90 eV below the conduction band edge and the corresponding trap density increases from 1.24 × 1012 cm−2 · eV−1 to 1.71 × 1013 cm−2 · eV−1, which is in good agreement with previously reported theoretical and experimental results. © The Author(s).
收录类别:SCOPUS
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081088312&doi=10.1149%2f2162-8777%2fab6162&partnerID=40&md5=b6e551ee4c192d7154d22598e34cf8bf
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