标题:Simulation of V/G During phi 450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates
作者:Guan, X. J.; Zhang, X. Y.
通讯作者:Guan, XJ;Guan, XJ
作者机构:[Guan, X. J.; Zhang, X. Y.] Shandong Univ, Sch Mat Sci & Engn, Jinan 250061, Peoples R China.; [Guan, X. J.; Zhang, X. Y.] Shandong Univ, Inst Cryst 更多
会议名称:International Symposium on Materials Application and Engineering (SMAE)
会议日期:AUG 20-21, 2016
来源:INTERNATIONAL SYMPOSIUM ON MATERIALS APPLICATION AND ENGINEERING (SMAE 2016)
出版年:2016
卷:67
DOI:10.1051/matecconf/20166702002
摘要:For discovering the principle of processing parameter combination for the stable growth and better wafer quality of phi 450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for phi 450 mm Cz silicon crystal growth are some different from that for phi 200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.
收录类别:CPCI-S
资源类型:会议论文
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