标题:Promotion impact of thermal oxidation etching to saturable absorption performance of g-C3N4
作者:Qian, Qizhang; Kong, Desheng; Zhao, Shengzhi; Li, Guiqiu; Cheng, Xin; Wang, Nan; Li, Tao; Li, Dechun; Yang, Kejian; Zang, Jie
作者机构:[Qian, Qizhang; Zhao, Shengzhi; Li, Guiqiu; Li, Tao; Li, Dechun; Yang, Kejian; Zang, Jie] Shandong Univ, Sch Informat Sci & Engn, Qingdao 266237, Peop 更多
通讯作者:Li, GQ;Li, GQ
通讯作者地址:[Li, GQ]Shandong Univ, Sch Informat Sci & Engn, Qingdao 266237, Peoples R China;[Li, GQ]Shandong Univ, Shandong Prov Key Lab Laser Technol & Applicat, 更多
来源:OPTICS AND LASER TECHNOLOGY
出版年:2019
卷:111
页码:597-603
DOI:10.1016/j.optlastec.2018.10.041
关键词:g-C3N4 saturable absorber; 2D-materials; Q-switched laser; Infrared; lasers
摘要:A facile thermal modification method based on thermal oxidation etching was successfully developed as an effective way of improving the photoelectric properties of graphite carbon nitride (g-C3N4), and the as-prepared modified g-C3N4 was employed as the saturable absorber (SA) for a passively Q-switched Nd:LLF laser at 1.06 mu m to improve the laser performance. Under the incident pump power of 7.68 W, a pulsed laser output with 110 ns pulse width at 95.5 kHz pulse repetition rate was achieved, which was the narrowest among the g-C3N4 materials used as SAs around 1 mu m.
收录类别:SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055697707&doi=10.1016%2fj.optlastec.2018.10.041&partnerID=40&md5=ceba92d76c190de539f0001b1cd2868e
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