标题:NiO Flowerlike porous hollow nanostructures with an enhanced interfacial storage capability for battery-to-pseudocapacitor transition
作者:Feng, Fan; Zhao, Shiqiang; Liu, Rui; Yang, Zewen; Shen, Qiang
作者机构:[Feng, Fan; Zhao, Shiqiang; Liu, Rui; Yang, Zewen; Shen, Qiang] Shandong Univ, Sch Chem & Chem Engn, Key Lab Colloid & Interface Chem, Educ Minist, Ji 更多
通讯作者:Shen, Qiang
通讯作者地址:[Shen, Q]Shandong Univ, Sch Chem & Chem Engn, Key Lab Colloid & Interface Chem, Educ Minist, Jinan 250100, Peoples R China.
来源:ELECTROCHIMICA ACTA
出版年:2016
卷:222
页码:1160-1168
DOI:10.1016/j.electacta.2016.11.088
关键词:Base-catalyzed reaction; Nanostructured electrode; Interfacial storage;; Lithium-ion batteries; Pseudocapacitors
摘要:As a lithium-ion battery (LIB) anode, transition metal oxide nanostructures usually exhibit an initially decreasing and subsequently increasing trend of specific discharge capacity, owing to the gradually enhanced interfacial storage capability. In this paper, a novel base-catalyzed reaction of nickel acetate is used to synthesize flowerlike hollow architectures of basic carbonate based precursor and then to obtain NiO flowerlike porous hollow nanostructures with a high surface-to-volume ratio. As a LIB anode at 200 mA g(-1), the observed discharge capacity of the working electrode decreases from an initial value of 1584.7 mAh g(-1) to the minimum value of 867.5 mAh g(-1) in the 76th cycle and then increases to the maximum value of 2142.8 mAh g(-1) in the 350th cycle. In each cycle, an interfacial fraction of the discharge capacity can be clearly distinguished and quantitatively estimated according to the discharging behaviors. These prove that the seemingly battery-to-pseudocapacitor transition relates both to bulk capacity loss and to interfacial capacity gain, depending upon the applied C-rate. Furthermore, the ordered arrangement of gradually crystallized Li2CO3, a main component of solid-electrolyte interface (SEI) layer, and its non-faradaic (double-layer capacitive) and faradaic (further reverse lithiation-delithiation) contributions may explain the over-compensating ability of interfacial storage. (C) 2016 Elsevier Ltd. All rights reserved.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:5
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006988557&doi=10.1016%2fj.electacta.2016.11.088&partnerID=40&md5=dbd600ff62c550ac90c0667cdf0d828e
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