标题:Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering
作者:Zhang, Huafu; Liu, Hanfa; Feng, Liu
作者机构:[Zhang, Huafu; Liu, Hanfa] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China.; [Feng, Liu] Shandong Univ Technol, Anal & Testin 更多
通讯作者:Zhang, H
通讯作者地址:[Zhang, HF]Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China.
来源:VACUUM
出版年:2010
卷:84
期:6
页码:833-836
DOI:10.1016/j.vacuum.2009.11.005
关键词:Zirconium-doped zinc oxide; Annealing temperature; DC magnetron; sputtering; Thin films
摘要:Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were deposited on quartz substrates by direct current (DC) magnetron sputtering at room temperature. The influence of post-annealing temperature on the structural, morphological, electrical and optical properties of ZnO:Zr films were investigated. When annealing temperature increases from room temperature to 573 K, the resistivity decreases obviously due to an improvement of the crystallinity. However, with further increase in annealing temperature, the crystallinity deteriorates leading to an increase in resistivity. The films annealed at the optimum annealing temperature of 573 K in vacuum have the lowest resistivity of 9.8 x 10(-4) Omega cm and a high transmittance of above 92% in the visible range. (C) 2009 Elsevier Ltd. All rights reserved.
收录类别:EI;SCIE
WOS核心被引频次:16
资源类型:期刊论文
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