标题:THE CHARACTERISTIC MIXED METHOD FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE
作者:袁益让
作者机构:Department of Mathematics,Shandong University,Jinan 250100,PRC
通讯作者:YUAN, YR
通讯作者地址:[YUAN, YR]SHANDONG UNIV,DEPT MATH,JINAN 250100,PEOPLES R CHINA.
来源:科学通报(英文版)
出版年:1992
卷:37
期:4
页码:342-343
收录类别:SCIE
资源类型:期刊论文
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