标题：Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
作者：Lu Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Wang Yuan-Gang; Xu Peng; Han Ting-Ting; Song Xu-Bo; Cai Shu-Jun; 更多 作者机构：[Lu Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Wang Yuan-Gang; Xu Peng; Han Ting-Ting; Song Xu-Bo; Cai Shu-Jun] Hebei Semicond Re 更多
通讯作者地址：[Feng, ZH]Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Peoples R China.
来源：CHINESE PHYSICS B
关键词：Al(Ga)N/GaN; strain; relative permittivity; Schottky metal
摘要：Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward I-V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.