标题:Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
作者:Lu Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Wang Yuan-Gang; Xu Peng; Han Ting-Ting; Song Xu-Bo; Cai Shu-Jun; 更多
作者机构:[Lu Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Wang Yuan-Gang; Xu Peng; Han Ting-Ting; Song Xu-Bo; Cai Shu-Jun] Hebei Semicond Re 更多
通讯作者:Feng, ZH
通讯作者地址:[Feng, ZH]Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Peoples R China.
来源:CHINESE PHYSICS B
出版年:2014
卷:23
期:2
DOI:10.1088/1674-1056/23/2/027102
关键词:Al(Ga)N/GaN; strain; relative permittivity; Schottky metal
摘要:Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward I-V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84894033210&doi=10.1088%2f1674-1056%2f23%2f2%2f027102&partnerID=40&md5=f56c8928a789097548d75d127eee1767
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