标题：Oxygen Vacancy-Modified B-/N-Codoped ZnGa2O4 Nanospheres with Enhanced Photocatalytic Hydrogen Evolution Performance in the Absence of a Pt Cocatalyst
作者：Zhao, Peng; Li, Yanlu; Li, Lili; Bu, Shulin; Fan, Weiliu
作者机构：[Zhao, Peng; Fan, Weiliu] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Shandong, Peoples R China.; [Li, Yanlu; Li, Lili] Shandong Univ, State 更多
通讯作者地址：[Fan, WL]Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Shandong, Peoples R China;[Li, YL]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, 更多
来源：JOURNAL OF PHYSICAL CHEMISTRY C
摘要：Here(;) we report oxygen vacancy (V-O)-modified B/ N-codoped ZnGa2O4 (V-O-B/N-ZGO) nanospheres, showing excellent photocatalytic H-2 production even without a Pt cocatalyst, which is better than that obtained with V-O-modified B-doped ZnGa2O4 (V-O-B-ZGO) or N-doped ZnGa2O4 (N-ZGO) and as high as about three times of that achieved with the undoped ZnGa2O4 (ZGO) photocatalyst The dramatically enhanced photocatalytic activity of V-O-B/N-ZGO predominately ongmates from the improvement of charge separation and surface activation. Experimental characterization combined with the theoretical calculation method demonstrates that V-O-B/N-ZGO can show effective charge compensation more easily through the interaction of oxygen vacancies, interstitial boron, and substitutional nitrogen; especially for the formation of a B-N bond, it avoids the presence of semioccupied states as new recombination centers in a doped photocatalyst. In addition, V-O-B/N-ZGO rich in reactive sites is generated by oxygen vacancy-modified B/N-codoping, which overcomes the limitation for most semiconductors without high H-2 evolution activities in the absence of a cocatalyst and provides a potentially new photocatalytic H-2 generation research.