标题:First principle study of electronic structures and optical properties of Ce-doped SiO2
作者:Cong, Wei-Yan; Lu, Ying-Bo; Zhang, Peng; Guan, Cheng-Bo
作者机构:[Cong, Wei-Yan; Lu, Ying-Bo; Zhang, Peng; Guan, Cheng-Bo] Shandong Univ, Sch Space Sci & Phys, Weihai 264209, Peoples R China.
通讯作者:Cong, WY
通讯作者地址:[Cong, WY]Shandong Univ, Sch Space Sci & Phys, Weihai 264209, Peoples R China.
来源:AIP ADVANCES
出版年:2018
卷:8
期:5
DOI:10.1063/1.5024592
摘要:Electronic structures and optical properties of Silicon dioxide (SiO2) systems with and without cerium(Ce) dopant were calculated using the density functional theory. We find that after the Ce incorporation, a new localized impurity band appears between the valance band maximum (VBM) and the conduction band minimum (CBM) of SiO2 system, which is induced mainly by the Ce-4f orbitals. The localized impurity band constructs a bridge between the valence band and the conduction band, making the electronic transition much easier. The calculated optical properties show that in contrast from the pure SiO2 sample, absorption in the visible-light region is found in Ce-doped SiO2 system, which originates from the transition between the valence band and Ce-4f dominated impurity band, as well as the electronic transition from Ce-4f states to Ce-5d states. All calculated results indicate that Ce doping is an effective strategy to improve the optical performance of SiO2 sample, which is in agreement with the experimental results. (C) 2018 Author(s).
收录类别:SCIE
资源类型:期刊论文
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