标题:Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates
作者:X J GUAN;X Y ZHANG;
作者机构:[X J GUAN]School of Materials Science and Engineering, Shandong University;[X Y ZHANG]Institute of Crystal Materials Shandong University
来源:Proceedings of 2016 International Symposium on Materials Application and Engineering (SMAE 2016)
出版年:2016
关键词:Simulation of V/G During;mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates;
摘要:For discovering the principle of processing parameter combination for the stable growth and better wafer quality of Φ450 mm Czochralski grown silicon single crystal(shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSi...
资源类型:会议论文
原文链接:http://kns.cnki.net/kns/detail/detail.aspx?FileName=XYWH201608001018&DbName=IPFD2016
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