标题:Pressure-sensitive Transistor Fabricated from an Organic Semiconductor 1,1 '-Dibutyl-4,4 '-bipyridinium Diiodide
作者:Fu Xianwei;Liu Yang;Liu Zhi;Dong Ning;Zhao Tianyu;Zhao Dan;Lian Gang;Wang Qilong;Cui Deliang
作者机构:[Fu Xianwei] State Key Laboratory of Crystal Materials, State Key Laboratory of Crystal Materials, Jinan, Shandong 250100, China.;[Liu Yang] State Key 更多
通讯作者:Lian, G(liangang@sdu.edu.cn)
通讯作者地址:[Lian, G; Cui, DL]Shandong Univ, State Key Lab Crystal Mat, Minist Educ, Sch Chem & Chem Engn, Jinan 250100, Shandong, Peoples R China.
来源:高等学校化学研究
出版年:2018
卷:34
期:1
页码:95-100
DOI:10.1007/s40242-018-7297-9
关键词:Pressure-sensitive transistor; Organic semiconductor; High-pressure;; Thermal stability
摘要:Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1'-dibutyl-4,4'-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.
收录类别:CSCD;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042718167&doi=10.1007%2fs40242-018-7297-9&partnerID=40&md5=0b1c2df2fcd24ae091225f3f9f3758e4
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