标题：Pressure-sensitive Transistor Fabricated from an Organic Semiconductor 1,1 '-Dibutyl-4,4 '-bipyridinium Diiodide
作者：Fu Xianwei;Liu Yang;Liu Zhi;Dong Ning;Zhao Tianyu;Zhao Dan;Lian Gang;Wang Qilong;Cui Deliang
作者机构：[Fu Xianwei] State Key Laboratory of Crystal Materials, State Key Laboratory of Crystal Materials, Jinan, Shandong 250100, China.;[Liu Yang] State Key 更多
通讯作者地址：[Lian, G; Cui, DL]Shandong Univ, State Key Lab Crystal Mat, Minist Educ, Sch Chem & Chem Engn, Jinan 250100, Shandong, Peoples R China.
关键词：Pressure-sensitive transistor; Organic semiconductor; High-pressure;; Thermal stability
摘要：Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1'-dibutyl-4,4'-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.