标题:Doubly passively Q-switched Nd:GGG laser with a monolayer graphene saturable absorber and GaAs wafer
作者:Qiao, J.; Zhao, S.; Li, Y.; Li, D.; Yang, K.; Li, G.; Zhao, J.; Qiao, W.; Chu, H.
作者机构:[Qiao, J.; Zhao, S.; Li, Y.; Li, D.; Yang, K.; Li, G.; Zhao, J.; Qiao, W.; Chu, H.] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R Ch 更多
通讯作者:Qiao, J.
通讯作者地址:[Qiao, J]Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.
来源:LASER PHYSICS
出版年:2014
卷:24
期:10
DOI:10.1088/1054-660X/24/10/105003
关键词:doubly Q-switched laser; monolayer graphene; GaAs wafer; Nd:GGG crystal
摘要:A doubly passively Q-switched Nd:GGG laser with monolayer graphene and GaAs wafer working as saturable absorbers is presented, in which the GaAs wafer also works as the output coupler. At the maximum incident pump power of 7.69 W, the obtained output power, the pulse duration and the pulse repetition rate are 820 mW, 1.06 ns, and 21.5 kHz, respectively, corresponding to pulse energy of 38.2 mu J and peak power of 35.9 kW, respectively.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84907223822&doi=10.1088%2f1054-660X%2f24%2f10%2f105003&partnerID=40&md5=1a13da84e802750d0cebab5d439d46ed
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