标题:Effect of La contents on La-doped Bi2Ti2O7 dielectric thin films
作者:Yang, XueNa; Liu, JianAn; Huang, BaiBiao; Gao, SiJiang
通讯作者:Yang, XN
作者机构:[Yang, XueNa; Liu, JianAn; Gao, SiJiang] Shandong Polytech Univ, Shandong Prov Key Lab Proc & Testing Technol Glas, Jinan 250353, Peoples R China.; 更多
会议名称:3rd International Conference on Advanced Engineering Materials and Technology (AEMT 2013)
会议日期:MAY 11-12, 2013
来源:ADVANCED ENGINEERING MATERIALS III, PTS 1-3
出版年:2013
卷:750-752
页码:931-+
DOI:10.4028/www.scientific.net/AMR.750-752.931
关键词:thin films; X-ray diffraction; dielectric properties
摘要:La-doped (Bi1-xLax)(2)Ti2O7 (BLTO) thin films with different La contents have been grown by CSD method. All the XRD patterns of the samples showed that the films were polycrystalline films. The intensities of the peaks decreased with the increasing of La contents. The general trend of the changes of leakage current was decreased with the increasing of x. The case of dielectric constant as a function of La content is complicated. The rule of change of the dielectric constant is different with different la contents. In view of dielectric constant and dielectric loss, we think that the film of x=0.2 has relative low leakage current and high dielectric constant, which is considered to be adequate for a DRAM.
收录类别:CPCI-S;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884894524&doi=10.4028%2fwww.scientific.net%2fAMR.750-752.931&partnerID=40&md5=773b21a6e75017a0b235bcd95535afe0
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