标题:Oxygen vacancies modulated coexistence of antiferromagnetism and ferromagnetism in ZnxCo1−xO single crystal epitaxial films
作者:Cai, Li ;Cao, Qiang ;Zhang, Kun ;Fu, Maoxiang ;Liu, Jiahui ;Huang, Qikun ;Tian, Yufeng ;Liu, Guolei ;Bai, Lihui ;Yan, Shishen
作者机构:[Cai, Li ;Fu, Maoxiang ;Liu, Jiahui ;Huang, Qikun ;Tian, Yufeng ;Liu, Guolei ;Bai, Lihui ;Yan, Shishen ] School of Physics, State Key Laboratory of Cr 更多
通讯作者:Yan, Shishen
来源:Journal of Magnetism and Magnetic Materials
出版年:2019
卷:473
页码:320-323
DOI:10.1016/j.jmmm.2018.10.101
摘要:Recently antiferromagnetic materials become very attractive due to their new applications in spintronic devices. High-quality single crystal epitaxial ZnxCo1−xO (1 1 1) thin films were grown by co-evaporating Zn and Co and simultaneously oxidizing in oxygen plasma. It is found that the exchange bias fields of Co/as-prepared ZnxCo1−xO bilayers decrease with increasing Zn composition. When as-prepared ZnxCo1−xO layer was annealed in oxygen plasma to remove oxygen vacancies, the exchange bias field of Co/oxygen-plasma-annealed ZnxCo1−xO bilayers can be further enhanced. Moreover, a weak ferromagnetism was observed at 300 K in the as-prepared antiferromagnetic ZnxCo1−xO film with oxygen vacancies, but it did not exist in oxygen-plasma-annealed ZnxCo1−xO film. This indicates that oxygen vacancies can simultaneously weaken the antiferromagnetism but enhance the ferromagnetism of ZnxCo1−xO layer. Therefore, we offer a method of manipulating the antiferromagnetism of ZnxCo1−xO films by changing Zn composition and oxygen vacancies, which is useful for designing antiferromagnetic spintronic devices.
© 2018 Elsevier B.V.
收录类别:EI
资源类型:期刊论文
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