标题:A new method to improve the unconditional stability of InGaP/GaAs heterojunction bipolar transistor
作者:Feng S.; Chen Y.; Li H.; Zhang M.
作者机构:[Feng, S] School of Information Science and Engineering, Shan Dong University, Jinan 250100, China;[ Chen, Y] School of Information Science and Engine 更多
通讯作者地址:[Feng, S] School of Information Science and Engineering, Shan Dong University, Jinan 250100, China
来源:Proceedings of International Conference on ASIC
出版年:2011
页码:772-774
DOI:10.1109/ASICON.2011.6157319
关键词:HBT; Stability factor; Unconditional stability
摘要:A new method to improve the unconditional stability of GaAs heterojunction bipolar transistor (HBT) is presented. The key point of this method is to improve the unconditional stability of HBT through optimized design of device physical parameters and avoid using additional stability network in the RF amplifier circuit. The parameter analysis and optimization design were implemented by Synopsys Sentaurus TCAD. The results show that the base doping concentration, the base thickness and the emitter doping concentration have remarkable influence on the GaAs HBT stability. An optimized HBT device with unconditional stability from low frequency (lower than 1GHz) to high frequency was obtained, and the RF gain of this device is almost not sacrificed. © 2011 IEEE.
收录类别:SCOPUS;SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860878152&doi=10.1109%2fASICON.2011.6157319&partnerID=40&md5=03a4e728838f45d801bb184be3d14520
TOP