标题：Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
作者：Ma, Pengfei; Sun, Jiamin; Liang, Guangda; Li, Yunpeng; Xin, Qian; Li, Yuxiang; Song, Aimin
作者机构：[Ma, Pengfei; Sun, Jiamin; Liang, Guangda; Li, Yunpeng; Xin, Qian; Li, Yuxiang; Song, Aimin] Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peo 更多
通讯作者：Li, YX;Song, AM;Li, YX;Song, AM;Song, AM;Song, AM
通讯作者地址：[Li, YX; Song, AM]Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;[Li, YX; Song, AM]Shandong Univ, Sch Microelectron, Jinan 2501 更多
来源：APPLIED PHYSICS LETTERS
摘要：Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) enabled by an ultrathin, 5 nm, HfO2 film grown by atomic-layer deposition were fabricated. An ultra-low operation voltage of 1V was achieved by a very high gate capacitance of 1300 nF/cm(2). The HfO2 layer showed excellent surface morphology with a low root-mean-square roughness of 0.20 nm and reliable dielectric properties, such as low leakage current and high breakdown electric field. As such, the a-IGZO TFTs exhibit desirable properties such as low power devices, including a small subthreshold swing of 75 mV/decade, a low threshold voltage of 0.3 V, and a high on/off current ratio of 8 x 10(6). Furthermore, even under an ultralow operation voltage of 0.5 V, the on/off ratio was also up to 1 x 10(6). The electron transport through the HfO2 layer has also been analyzed, indicating the Poole-Frenkel emission and Fowler-Nordheim tunneling mechanisms in different voltage ranges. Published by AIP Publishing.