标题：Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering
作者机构：[蒋然;李子峰]School of Physics, Shandong University, Ji\'nan, 250100
通讯作者地址：[Jiang, R]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
摘要：The chemical structure of ultrathin Hf oxide films (< 10 nm) fabricated by a standard sputtering method is investigated using x-ray spectroscopy and Rutherford backscattering spectroscopy. According to the experiments, oxygen species are impacted to the HfO(2)/Si interface during the initial sputtering, and then released back to the upper HfO(2) region driven by the oxygen concentration grads. A vacuum annealing can greatly enhance this recovery process. Additionally, significant SiO(2) reduction in the interface is observed after the vacuum annealing for the thick HfO(2) films in our experiment. It might be an effective method to confine the interfacial layer thickness by sputtering thick HfO(2) in no-oxygen ambient.