标题:Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering
作者:蒋然[1];李子峰[1]
作者机构:[蒋然;李子峰]School of Physics, Shandong University, Ji\'nan, 250100
通讯作者地址:[Jiang, R]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
来源:中国物理快报:英文版
出版年:2009
卷:26
期:5
页码:195-198
关键词:氧化物;溅射;薄膜材料;HFO2薄膜;X射线光谱;界面层厚度;高频;回收;
摘要:The chemical structure of ultrathin Hf oxide films (< 10 nm) fabricated by a standard sputtering method is investigated using x-ray spectroscopy and Rutherford backscattering spectroscopy. According to the experiments, oxygen species are impacted to the HfO(2)/Si interface during the initial sputtering, and then released back to the upper HfO(2) region driven by the oxygen concentration grads. A vacuum annealing can greatly enhance this recovery process. Additionally, significant SiO(2) reduction in the interface is observed after the vacuum annealing for the thick HfO(2) films in our experiment. It might be an effective method to confine the interfacial layer thickness by sputtering thick HfO(2) in no-oxygen ambient.
收录类别:CSCD;SCIE
WOS核心被引频次:3
资源类型:期刊论文
原文链接:http://lib.cqvip.com/qk/84212X/200905/30182503.html
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