标题:XPS Analysis of ZnO thin Films Obtained by Pulsed Laser Deposition
作者:He, Jianting; Tan, Boxue; Su, Yuanbin; Yang, Shulian; Wei, Qinqin
通讯作者:He, J
作者机构:[He, Jianting; Tan, Boxue; Su, Yuanbin; Yang, Shulian; Wei, Qinqin] Shandong Univ Technol Zibo, Sch Elect & Elect Engn, Zibo, Peoples R China.
会议名称:International Conference on Manufacturing Science and Technology (ICMST 2011)
会议日期:SEP 16-18, 2011
来源:MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8
出版年:2012
卷:383-390
页码:6293-6296
DOI:10.4028/www.scientific.net/AMR.383-390.6293
关键词:XPS; ZnO; pulsed laser deposition; oxygen partial pressure
摘要:Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.
收录类别:CPCI-S;EI
WOS核心被引频次:5
资源类型:会议论文
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