标题：XPS Analysis of ZnO thin Films Obtained by Pulsed Laser Deposition
作者：He, Jianting; Tan, Boxue; Su, Yuanbin; Yang, Shulian; Wei, Qinqin
作者机构：[He, Jianting; Tan, Boxue; Su, Yuanbin; Yang, Shulian; Wei, Qinqin] Shandong Univ Technol Zibo, Sch Elect & Elect Engn, Zibo, Peoples R China.
会议名称：International Conference on Manufacturing Science and Technology (ICMST 2011)
会议日期：SEP 16-18, 2011
来源：MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8
关键词：XPS; ZnO; pulsed laser deposition; oxygen partial pressure
摘要：Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.