标题:Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser
作者:Liu, Lijie ;Chu, Hongwei ;Zhang, Xiaodong ;Pan, Han ;Zhao, Shengzhi ;Li, Dechun
作者机构:[Liu, Lijie ;Chu, Hongwei ;Zhang, Xiaodong ;Pan, Han ;Zhao, Shengzhi ;Li, Dechun ] School of Information Science and Engineering, Shandong University, 更多
通讯作者:Chu, Hongwei
来源:Nanoscale Research Letters
出版年:2019
卷:14
DOI:10.1186/s11671-019-2953-7
摘要:Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.
© 2019, The Author(s).
收录类别:EI
资源类型:期刊论文
TOP